One-tenth decade Research on Nonlinear Interaction Effects in Avalanche Device and Its Mechanism in High Order Frequency Multiplication 1/10的十倍频程雪崩器件非线性效应及高次倍频机理研究
Avalanche multiplication effect in semiconductors 半导体中的雪崩倍增效应
InGaAs/ InGaAsP/ InP seperate absorption, grading and multiplication avalanche photodiodes ( SAGM-APD's) have low dark current, low multiplication noise, and high gain-bandwidth product. InGaAs/lnGaAsP/InP分隔吸收区、梯度区、倍增区的雪崩光电二极管(SAGMAPD)具有小的暗电流、低的雪崩倍增噪声和高的增益-带宽乘积。
An expression is presented to determine the spectral noise power density of microwave solid state noise diodes based on the theory of PN junction avalanche multiplication, the limited multiplication and the adaptable diode model. 本文根据PN结雪崩噪声理论、有限倍增因子和合适的二极营模式提出了微波固体噪声二极管噪声功率谱密度的表示式,并对其谱特性进行分析。
The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration. 本文以带有隧道穿透的PN结雪崩倍增理论,研究了微波固体噪声二极管。
A 4H-SiC avalanche photodetector ( APD) with separate absorption and multiplication layers was designed and fabricated. 设计和制备了吸收层和倍增层分开的4H-SiC穿通型雪崩紫外光电探测器。
The major achievements are listed as the followings: 1. The nonlinear character of avalanche device in high order frequency multiplication mode is researched and analyzed systematically. 论文的主要工作成果主要有:1.在理论上系统全面深入地展开雪崩器件非线性特性及高次倍频机理的研究。
The Larger the reverse bias voltage, the shorter the time required to produce the same output current; the larger the avalanche multiplication. 反向偏置电压越大,产生相同倍增电流输出所需要的时间越短,雪崩倍增的强度也越大。